发明名称 |
Graded dielectric layer and method for fabrication thereof |
摘要 |
Within a method for forming a dielectric layer, there is first provided a substrate. There is then formed over the substrate a dielectric layer, wherein the dielectric layer is formed from a dielectric material comprising silicon, carbon and nitrogen. Preferably, a nitrogen content is graded within a thickness of the dielectric layer to provide an upper lying nitrogen rich contiguous surface layer of the dielectric layer and a lower lying nitrogen poor contiguous layer of the dielectric layer. The method contemplates a microelectronic fabrication having formed therein a dielectric layer formed in accord with the method. The method provides the resulting dielectric layer with a lower dielectric constant and enhanced adhesion properties as a substrate layer.
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申请公布号 |
US6657284(B1) |
申请公布日期 |
2003.12.02 |
申请号 |
US20000727634 |
申请日期 |
2000.12.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LI LAIN-JONG;JENG SHWANG-MING;JANG SYUN-MING;YU CHEN-HUA |
分类号 |
H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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