发明名称 Film forming method and film forming system
摘要 In an organic insulating film coating apparatus, an organic insulating film is applied onto a wafer by a spin coating. Thereafter, the wafer is subjected to heat processing and an inorganic insulating film is applied onto the wafer by a spin coating in an inorganic insulating film coating apparatus. After the coating of the inorganic insulating film, the wafer is subjected to aging processing and exchange-chemical coating processing. Thereafter, a solvent in the coating film is removed in a low-temperature heat processing apparatus and a low-oxygen and high-temperature heat processing apparatus, and thermal processing is performed for the wafer in a low-oxygen curing and cooling processing apparatus. The low-temperature heat processing apparatus, the low-oxygen and high-temperature heat processing apparatus, a delivery section for the wafer between the low-temperature heat processing apparatus and the low-oxygen and high-temperature heat processing apparatus, and a delivery section for the wafer between the low-oxygen and high-temperature heat processing apparatus and the low-oxygen curing and cooling processing apparatus are brought to low-oxygen atmospheres.
申请公布号 US6656273(B1) 申请公布日期 2003.12.02
申请号 US20000593948 申请日期 2000.06.15
申请人 TOKYO ELECTRON LIMITED 发明人 TOSHIMA TAKAYUKI;KONISHI NOBUO;MIZUTANI YOJI
分类号 H01L21/3105;H01L21/00;(IPC1-7):B05C9/14 主分类号 H01L21/3105
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