发明名称 Photon source
摘要 A photon source, comprising a first semiconductor region having excess carriers with a first conductivity type, and a second semiconductor region having excess carriers with a second conductivity type, the first and second conductivity types being opposing conductivity types; means for creating a surface acoustic wave (SAW) travelling from the first semiconductor region to the second semiconductor region such that excess carriers from the first semiconductor region are carried by the wave to the second region and quantizing means for quantizing the carrier transport caused by the wave, such that the number of carriers introduced into the second semiconductor region can be controlled to the accuracy of a single carrier.
申请公布号 US6657222(B1) 申请公布日期 2003.12.02
申请号 US20000662002 申请日期 2000.09.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FODEN CLARE LOUISE;LEADBEATER MARK LEVENCE;TALYANSKY VALERY
分类号 H01L27/15;H01S5/04;H01S5/34;(IPC1-7):H01L29/40;H01L31/00 主分类号 H01L27/15
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