发明名称 |
Semiconductor device having internal power terminals including a positive power terminal and a negative power terminal |
摘要 |
A semiconductor device having internal power terminals including a positive power terminal supplying a high potential and a negative power terminal supplying a low potential to the internal device region of a semiconductor chip in which the positive power terminal and the negative power terminal are arranged uniformly in the internal device region of the semiconductor chip and power is supplied from the outside of the semiconductor chip to the internal power terminal, wherein a metalizing metal of the same layer as the internal power terminal is wired between the internal power terminals in a tandem shape so as to be connected to the internal power terminal of the same. |
申请公布号 |
US6657910(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020265261 |
申请日期 |
2002.10.07 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KONDOU KEIICHIROU |
分类号 |
H01L21/822;H01L21/82;H01L23/528;H01L27/04;(IPC1-7):G11C7/00 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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