THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor array substrate and a method for manufacturing the same are provided to realize the uniform characteristic of the thin film transistors by preventing a channel part of a semiconductor layer from being exposed to an external environment. CONSTITUTION: A conductive material is accumulated on a substrate and is patterned to form a gate wiring including gate lines(121) and gate electrodes(123). A gate insulating film(140) is accumulated on the substrate. An amorphous silicon layer is formed on the gate insulating film. The amorphous silicon layer is crystallized to form a polycrystalline silicon semiconductor layer(150). Resistant contact layers(163,165) are formed on the semiconductor layer. A data wiring including data lines, and source and drain electrodes(173,175) are formed on the gate insulating film or the semiconductor layer.