METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to perform a direct pad etch process of a semiconductor device with a DLM(double level metal) structure by forming a metal pad on both sides of a predetermined conductive layer exposed in an etch process of an insulation layer for forming a pad of the semiconductor device. CONSTITUTION: A conductive layer is formed on a semiconductor substrate. An insulation layer is formed on the conductive layer. The first metal interconnection is formed in a predetermined region of the substrate. An interlayer dielectric is formed on the substrate. The interlayer dielectric is selectively etched to expose the conductive layer and the first layer metal interconnection. The second metal layer is formed on the substrate. The second metal layer is patterned to be a predetermined pattern so that the second metal interconnection is formed in a predetermined region of the substrate while a metal pad(7) is formed. A passivation layer(8) is formed on the substrate. A protection layer(9) is formed on the passivation layer. The protection layer is selectively etched to form a protection layer pattern exposing the conductive layer. The exposed passivation layer and insulation layers under the passivation layer are etched by using the protection layer pattern as a mask.