| 摘要 |
PURPOSE: A GaN light emission device and a package of the same are provided to use a flip chip bonding method by providing an anode and a cathode electrode structure of a changed light emission device. CONSTITUTION: A GaN light emission device and a package of the same comprise a substrate(1a), an N-GaN layer(1b), an active layer(1c), and a P-GaN layer(1d). The first electrode(1e) of a plane shape is contacted with the P-GaN layer(1d) and projected from the P-GaN layer(1d). The second electrode(1f) of the plane shape is contacted with the N-GaN layer(1b). The second electrode(1f) is insulated electrically with the active layer(1c), the P-GaN layer(1d), and the first electrode(1e). The second electrode(1f) is projected to the projected height of the first electrode(1e). |
