METHOD FOR FABRICATING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact of a semiconductor device is provided to prevent a void or seam in a contact by making a contact hole filled with conductive metal and by depositing a deposition preventing layer on the upper sidewall of the contact hole. CONSTITUTION: An interlayer dielectric(22) is deposited on a semiconductor substrate(20). A predetermined portion of the interlayer dielectric is etched to form a contact hole. A barrier metal layer is formed on the interlayer dielectric and the contact hole. The deposition preventing layer is formed only on the barrier metal layer on the upper sidewall of the interlayer dielectric and the contact hole. The inside of the contact hole is filled with conductive metal(28).