METHOD FOR FABRICATING SILICIDE LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for fabricating a silicide layer is provided to improve an interfacial characteristic between a silicide layer and a silicon substrate and uniformity of sheet resistance by preventing an agglomeration phenomenon caused by surface movement of metal atoms included in the silicide layer while using a capping layer and by preventing an oxide agent from penetrating while controlling the growth of grains of a lower polysilicon layer. CONSTITUTION: A silicon substrate(101) is prepared which has a junction part composed of a conductive layer including a silicon component. A metal layer is formed on the resultant structure including the junction part. The metal component of the metal layer reacts with the silicon component of the conductive layer to form the silicide layer(106) by the first heat treatment process. The remaining metal layer that does not react with the conductive layer is eliminated. The capping layer is formed on the resultant structure including the silicide layer. The second heat treatment process is performed to improve the quality of the silicide layer. The capping layer is removed.