VERTICAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A vertical double diffused metal oxide semiconductor(VDMOS) device is provided to decrease the resistance in a drift region by forming a well in a predetermined region of the drift region wherein the doping density of the well is relatively higher than that of the drift region. CONSTITUTION: A substrate(102) is prepared. The drift region(106) doped with low density impurities of the first conductivity type is formed on the substrate. A plurality of body regions(126) doped with impurities of the second conductivity type are formed in the drift region. A source region(130) doped with high density impurities of the first conductivity type is formed in the body region. A bulk region(136) doped with high density impurities of the second conductivity type is formed in the body region, adjacent to the source region. The well(110) of the first conductivity type is formed in the drift region, surrounding at least a part of the plurality of body region.