METHOD FOR FABRICATING PHASE SHIFT MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a phase shift mask of a semiconductor device is provided to prevent a phase shift pattern from being affected by the particles caused by depositing and etching a light mask layer by forming the phase shift pattern in a pattern region, by making the phase shift pattern shielded by a photoresist pattern and by selectively forming the light mask layer in a blind region. CONSTITUTION: A quartz substrate(100) is prepared in which the pattern region and the blind region surrounding the pattern region are defined. The phase shift pattern(110a) is formed on the pattern region of the quartz substrate while a phase shift plate(110b) is formed on the blind region. A protection pattern is formed on the pattern region of the quartz substrate in which the phase shift pattern is formed. The light mask layer(140) is formed on the phase shift plate and the protection pattern in the blind region. The light mask layer is patterned to be left only on the phase shift plate in the blind region. The protection pattern is eliminated.