| 摘要 |
PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to form gate or data wires through a plating method instead of sputtering method, thereby simplifying the fabricating procedure and reducing the fabricating time. CONSTITUTION: A thin film transistor substrate includes a transparent insulating substrate(110), and gate wires(121,123,125) formed in a dual layer structure of first seed layers(211,231,251) and first plated layers(212,232,252). The first seed layers are to reinforce the joining between the first plated layers and the insulating film. Data wires(173,175,177,179) are formed of a plurality of layers of second seed layers and second plated layers except drain electrodes formed of the second seed layers. The second seed layers of the data wires reinforce the joining between the second plated layers and resistant contact layers(161,163,165). The resistant contact layers are formed on a gate insulating film(140) corresponding to gate electrodes by doping n type impurities at a high concentration to a semiconductor material such as amorphous silicon. |
