METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE USING (TA-TI)ON DIELECTRIC FILM

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of obtaining high capacitance by performing plasma oxidation processing after depositing a (Ta-Ti)ON dielectric film using LPCVD(Low Pressure CVD). CONSTITUTION: A lower electrode(16) is formed on a substrate. Nitridation treatment of the surface of the lower electrode(16) is carried out. The first Ta2O5 film(22) is formed on the lower electrode. A (Ta-Ti)ON dielectric film is then formed by forming a TiN film on the first Ta2O5 film(22) and injecting nitrogen using LPCVD. The second Ta2O5 film(30) is formed on the resultant structure, and plasma oxidation processing is performed at atmosphere of O2 or N2O gas, thereby forming a (Ta-Ti)ON dielectric film. An upper electrode is then formed on the (Ta-Ti)ON dielectric film.