| 摘要 |
PURPOSE: A hydrogen barrier layer and a method for manufacturing a semiconductor device with the same are provided to be capable of preventing the diffusion of hydrogen into a capacitor by using an AlTiO layer as the hydrogen barrier layer. CONSTITUTION: A capacitor is formed on a semiconductor substrate(21) having a transistor. The first hydrogen barrier layer(32) made of AlTiO is formed on the capacitor. A metal interconnection(35) is formed so as to connect the capacitor and the transistor. The second hydrogen barrier layer(36) made of AlTiO is formed on the metal interconnection(35). Then, a passivation layer is formed on the second hydrogen barrier layer.
|
