| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a fine semiconductor integrated circuit having a thin film resistor in which a wiring pattern is formed by dry etching without an additional formation process for a protective film and without needing particular conditions for etching conditions for forming a contact hole. <P>SOLUTION: An electronic circuit component is formed on a semiconductor substrate 11, and a thin film resistor 14 is formed on a USG film 13 on the surface of the component. A BPSG film (interlayer insulating film) 15 for flattening is formed on the thin film resistor 14 and the USG film 13, and contact holes 16, 18 are formed in the BPSG film and in the USG film for exposing the connecting portion of the thin film resistor 14 and a portion for connecting the thin film resistor. A wiring material is formed over the entire surface of the substrate thus obtained, and wiring 19 connected with the thin film resistor 14 is formed by patterning by dry etching. <P>COPYRIGHT: (C)2004,JPO</p> |
