| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which obtains an oscillation wave length variable characteristic in a wide range while obtaining a favorable trans verse mode by adopting a ridge structure as a waveguide structure. SOLUTION: The semiconductor laser is provided with a first clad layer 3 formed on a semiconductor substrate 1, an active layer 4 formed on the first clad layer 3, a second clad layer 5 formed on the active layer 4, a current block layer 11 which constricts a current formed on the second clad layer 5 and a third clad layer 10 having a ridge structure formed on the second clad layer 5. The current block layer 11 is formed along both side surfaces of the third clad layer 10. It has a DBR region which adjusts an oscillation wavelength and a diffraction lattice 7 is formed in a region corresponding to the DBR region on the second clad layer 5, and a laser beam of a single vertical mode is oscillated. Part of the side surface of the third clad layer 10 is not covered with the current block layer 11 and is opened. COPYRIGHT: (C)2004,JPO
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