SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve a complicated process for manufacturing an insulated gate transistor such as FET (field-effect transistor) and IGBT (insulated gate bipolar transistor) having a semiconductor region for the prevention of an electric field concentration or the extraction of a carrier. SOLUTION: A substrate 1, which includes an N+drain region 2, N drift region 3, and a P semiconductor region 6 for the prevention of the electric field concentration and the extraction of the carrier, is prepared. A mask having an opening for a gate insulating film and an openning for forming an ohmic connection region is formed, and the gate insulating region is formed. A polycrystal silicon film accorded to a pattern of a gate electrode 9 is formed. A body region 4 and an ohmic connection P+semiconductor region 7 are attained by diffusing a P impurity with the polycrystal silicon film as a mask. A source region 5 and an unnecessary N semiconductor region 28 are formed by diffusing an N impurity also using a P diffusion mask. An opening to connect a source electrode 11 is formed on the insulating film, and a first and second removing hollows 14, 15 are formed on the substrate. The first and second removing hollows 14, 15 are filled with a source electrode 11. COPYRIGHT: (C)2004,JPO