| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a solar cell element for preventing short circuit between electrodes caused by pn junction, achieving a superior yield at low manufacturing costs, and manufacturing the solar cell element having excellent photoelectric conversion characteristics. <P>SOLUTION: The solar cell element includes: a p-type semiconductor substrate where the pn unction is formed at a light-reception-surface side; a pn junction separation band formed on the rear side of a light reception surface on the p-type semiconductor substrate; a surface electrode formed on the light reception surface of the p-type semiconductor substrate; and a rear electrode formed on the rear of the p-type semiconductor substrate. The manufacturing method of the solar cell element includes a masking process for applying a mask solution near the end of the rear of the p-type semiconductor substrate by an inkjet method and forming a mask layer having a continuous annular shape. In this case, preferably, the width of the mask layer ranges from 0.1 to 2 mm, and the thickness of the mask layer ranges from 30 to 300 nm. <P>COPYRIGHT: (C)2004,JPO</p> |
