| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device in which a bottom-top gate type TFT can be formed by a small number of processes, an electrooptical device, electronic equipment, a manufacturing method of the thin-film semiconductor device, and a manufacturing method of the electrooptical device. <P>SOLUTION: In a TFT array substrate, a TFT 30g has both bottom and top-gate structures. In a first gate electrode 8d, an overhang 8e that does not overlap with a second gate electrode 3d in a plan view is formed. A conductive film 6f for connection formed on the upper layer of an interlayer insulating film 4 is electrically connected to the first and second gate electrodes 8d and 3d via contact holes 4m and 4n. <P>COPYRIGHT: (C)2004,JPO</p> |
