| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) method of a semiconductor device is provided to prevent dishing and to improve surface roughness by using two-step CMP processes. CONSTITUTION: In a CMP method for polishing a polish object layer, such as an oxide layer(33), a nitride layer or a silicon layer(31), two-step CMP processes are carried out. The first CMP processing is performed by using a basic slurry having a high polishing selectivity to the oxide layer. Also, the second CMP processing is performed by using an acid slurry having a high polishing selectivity to the nitride layer. At this time, the acid slurry is one selected from group consisting of H3PO4, HNO3, H2O2 and compound thereof.
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