发明名称 Silicon nitride porous body and method of manufacturing the same.
摘要 A silicon nitride porous body (5) obtained by nitriding a molded body having metallic silicon (3) as a main component, the porous body having a porous structure with an average pore diameter of 3 mu m or above, and wherein the total content of silicon and nitrogen is 95% or above and the nitridation ratio of silicon is 90% or above. The silicon nitride porous body has a porous structure with a large average pore diameter, with a test specimen cut out from the porous body exhibiting large thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter. <IMAGE>
申请公布号 ZA200209678(B) 申请公布日期 2003.11.28
申请号 ZA20020009678 申请日期 2002.11.28
申请人 NGK INSULATORS, LTD. 发明人 KATSUHIRO INOUE;KENJI MORIMOTO;MASAAKI MASUDA;SHINJI KAWASAKI;HIROAKI SAKAI
分类号 B01D39/20;B01D53/22;B01D53/86;B01D71/02;B01J27/24;B01J32/00;B01J35/00;B01J35/04;B01J35/10;C04B35/584;C04B35/591;C04B38/00;F01N3/28 主分类号 B01D39/20
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