HYDROGEN BARRIER LAYER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE WITH THE SAME

摘要

PURPOSE: A hydrogen barrier layer and a method for manufacturing a semiconductor device with the same are provided to be capable of preventing the diffusion of hydrogen into a capacitor by using a ZrTiO layer as the hydrogen barrier layer. CONSTITUTION: A zirconium target(104) and a titanium target(105) are mounted in a deposition chamber(100). Mixed gases of argon and oxygen are supplied into the deposition chamber(100). Argon plasma is generated by ionization of argon gas. Thereby, a ZrTiO layer(108) is deposited on a wafer(102) loaded in the deposition chamber(100). Then, the ZrTiO layer(108) is densified, and oxygen is filled on the surface of the ZrTiOn layer(108).