发明名称 Semiconductor pressure sensor, comprises rectangular substrate with orientated crystallography, thinned to form membrane with surface strain gauges
摘要 The rectangular semiconductor substrate (10) has four sides (10a), an active front surface (11) and a rear surface (12), each with crystallographic orientation 110. Each of the four sides includes an angle of 45degrees with the 110 orientation, which lies parallel to the active surface. The substrate (10) has a membrane (14) at the active surface, formed by a depression (13) made into the rear surface. The membrane includes measurement resistances (Rc1, Rc2, Rs1, Rs2). Pressure is measured from the alteration in these resistances.
申请公布号 FR2840067(A1) 申请公布日期 2003.11.28
申请号 FR20030005882 申请日期 2003.05.16
申请人 DENSO CORPORATION 发明人 ISHIO SEIICHIRO
分类号 G01L9/00;H01L29/84;(IPC1-7):G01L9/06;H01L21/784 主分类号 G01L9/00
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