ORGANOMETAL COMPLEX AND METHOD FOR DEPOSITING METAL SILICATE THIN LAYER USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an organometal complex and a method for depositing a metal silicate thin layer using the complex. SOLUTION: The metal silicate thin layer having a desired composition and useful as a gate insulation layer for a semiconductor element is easily producible by contacting a substrate with a vapor of an organometal complex of formula (1); (X)a-b-M-(Y-(Si(R)3)m)b(M is a trivalent or tetravalent metal; R is a 1-4C alkyl; X is a halogen or an alkyl; Y is O or N; (a) is 3 and (b) is an integer of 1-3 when M is a trivalent metal, or (a) is 4 and (b) is an integer of 1-4 when M is tetravalent metal; and (m) is 1 when Y is O, or (m) is 2 when Y is N). COPYRIGHT: (C)2004,JPO