| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of obtaining sufficient interconnection area by using a storage node layer as an interconnection layer. CONSTITUTION: A dielectric film(20) is formed on a cap oxide layer(10) having a storage node layer. A stress relaxation layer and a metal film are sequentially formed on the entire surface of the cap oxide layer. By selectively etching the metal film and the stress relaxation layer, a metal-plate pattern(50) including a stress relaxation pattern(30a) and a metal pattern(40a) is then formed. A planarization layer(60) is formed on the metal-plate pattern(50). Then, a metal line(70) is formed on the planarization layer.
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