| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which is multi-layered by stacking a transistor which uses an insulating substrate, requiring no wafer, being free in substrate shape, and yielding a structure that possesses the same effect as SOI, and which is prepared by forming a transistor-forming layer on the upper side of a wiring layer and a contact layer, and a transistor which is prepared by an ordinary transistor forming method, in a manufacturing process of an LSI chip. <P>SOLUTION: The semiconductor device is obtained by forming wirings 15a, 15b and contacts 14b-14d on an insulating substrate 28, forming a semiconductor layer on nearly the top of the insulating substrate 28, and forming a transistor 6 in which a source 2, a gate electrode 5, and a drain 3 or the like are formed. <P>COPYRIGHT: (C)2004,JPO |
