发明名称 |
METHOD AND SYSTEM FOR PLASMA PROCESSING |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a system for plasma processing in which a uniform plasma can be generated with good firing properties under a low pressure. <P>SOLUTION: While introducing specified gas from a gas supply into a vacuum container provided with a deformed groove part 16 having a partially varying groove width in a plasma trap 14, the vacuum container is exhausted by means of an exhauster. While sustaining a specified pressure in the vacuum container, a high frequency power of 100 MHz is supplied from a high frequency power supply to an antenna 5. A plasma is fired under a low pressure of 1 Pa or less and the uniform plasma is generated in the vacuum container, so that a substrate can be subjected to uniform plasma processing. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003338495(A) |
申请公布日期 |
2003.11.28 |
申请号 |
JP20020147923 |
申请日期 |
2002.05.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SUZUKI HIROYUKI;OKITA SHOGO;MIYAKE KIYOO |
分类号 |
H05H1/46;C23C16/509;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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