发明名称 METHOD AND SYSTEM FOR PLASMA PROCESSING
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and a system for plasma processing in which a uniform plasma can be generated with good firing properties under a low pressure. <P>SOLUTION: While introducing specified gas from a gas supply into a vacuum container provided with a deformed groove part 16 having a partially varying groove width in a plasma trap 14, the vacuum container is exhausted by means of an exhauster. While sustaining a specified pressure in the vacuum container, a high frequency power of 100 MHz is supplied from a high frequency power supply to an antenna 5. A plasma is fired under a low pressure of 1 Pa or less and the uniform plasma is generated in the vacuum container, so that a substrate can be subjected to uniform plasma processing. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003338495(A) 申请公布日期 2003.11.28
申请号 JP20020147923 申请日期 2002.05.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUZUKI HIROYUKI;OKITA SHOGO;MIYAKE KIYOO
分类号 H05H1/46;C23C16/509;H01L21/205;H01L21/3065 主分类号 H05H1/46
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