发明名称 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERN-FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition which has a high sensitivity to an energy ray, does not suffer from resist pattern narrowing or shape deformation into a T-shape of the surface of the resist pattern with the lapse of time from exposure to a heat treatment, and is excellent in pattern-forming properties near the substrate and suitable for ArF exposure, a pattern-forming method and a pattern. <P>SOLUTION: An acid-generating agent is comprised of a sulfonium cation represented by general formula (1) (wherein R<SP>1</SP>is a benzyl group or the like; and R<SP>2</SP>and R<SP>3</SP>are each an alkyl group or the like) and a sulfonate anion represented by general formula (2): R<SP>4</SP>SO<SB>3</SB><SP>-</SP>(wherein R<SP>4</SP>is an alkyl group or the like). <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003336033(A) 申请公布日期 2003.11.28
申请号 JP20020144010 申请日期 2002.05.20
申请人 TOYO INK MFG CO LTD 发明人 ARISHIMA MASASHI;UESUGI TAKAHIKO
分类号 G03F7/004;C09K3/00;H01L21/027 主分类号 G03F7/004
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