| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the lifetime and the manufacturing yield of a memory device by performing recognition and correction of defective parts in the inside of a device. <P>SOLUTION: A memory device 20 has a memory block 1 consisting of a plurality of standard sectors 15 and a redundancy part 2, a control circuit 3 controlling programming and erasing of memory cell data, and an accuracy verifying circuit 7 for data stored in a memory cell. The correctness verifying circuit is operated by the control circuit and generates an incorrect data signal when detecting even only one non-functioning cell. The control circuit activates redundancy, operates a redundant part, and stores the redundant data in a redundant memory stage 5b in the presence of incorrect data. Various implementation methods of column redundancy, row redundancy, and sector redundancy in both operation of erasing and programming are provided. <P>COPYRIGHT: (C)2004,JPO</p> |
