| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enable the rapid operation of a laser equipped with a modulator by restraining the mutual diffusion of a dopant. <P>SOLUTION: The semiconductor device generates a laser beam from an active layer 2 and has a ridge-shaped mesa 5 including an active layer 2, a current block layer 6 formed to fill both sides of the mesa 5, a diffusion stopping layer 10 formed to continue to the mesa 5 and the current block layer 6 and a p-InP clad layer 7 which is formed on the diffusion stopping layer 10 and contains prescribed impurities. It is possible to restrain impurities of the p-InP clad layer 7 from diffusing to the current block layer 6, thus bringing about the low resistance of the current block layer 6 and to enable the rapid operation of the laser equipped with the modulator. <P>COPYRIGHT: (C)2004,JPO</p> |
