TANTALUM COMPLEX AND SOLUTION RAW MATERIAL CONTAINING THE COMPLEX AND USED FOR ORGANIC METAL CHEMICAL VAPOR DEPOSITION METHOD AND TANTALUM-CONTAINING THIN FILM FORMED FROM THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a solution raw material which is used for organic metal chemical vapor deposition and is uniformly and stably evaporated to give a desired highly pure tantalum-containing thin film at a large film-forming speed, and to provide the highly pure tantalum-containing thin film having an excellent barrier property as a substrate for a copper thin film. SOLUTION: This tantalum complex is represented by the general formula (1) (R is ethyl; R' is a 6 to 11C linear or branched alkyl). COPYRIGHT: (C)2004,JPO