| 摘要 |
PURPOSE: A mask for crystallization of silicon and a crystallizing method thereof are provided to distribute ununiform areas formed by laser radiation to corner parts of a mask. CONSTITUTION: A mask for crystallization of silicon includes transmission areas(G) and shield areas(H). The transmission areas are in the traverse stripe shape with edge parts(M) not in the straight form. The longitudinal length(B) of the transmission areas are smaller than or equal to double of a maximum growth length of grains to induce the maximum lateral growth of the grains by 2-shot manner. By using the mask, laser is primarily radiated to a substrate, amorphous silicon areas corresponding to the transmission areas are melt and the crystallization is advanced from both interfaces of the melted amorphous silicon. The growth of the grains begins from the interfaces and stops in the intermediate point of the silicon corresponding to the transmission areas of the mask. The laser is radiated secondarily to the substrate after overlapping the crystallized areas partially by the mask, for increasing the size of the grains.
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