发明名称 Power amplifier with gain switching and reduced noise power in the reception band, for use in double-band power amplifiers
摘要 The power amplifier comprises an amplification section (28) containing a power amplification circuit (42) having three amplification stages (422,423,425) and a signal transmission section (58), and a polarization circuit (40); and an output matching circuit (36). When a mode selection voltage (Vmod2) is at low level, an input signal is amplified by the three amplification stages, and the signal transmission section (58) does not transmit any signal. When the mode selection voltage (Vmod2) is at high level, the signal transmission section (58) transmits the input signal (IN1800) to a transistor (Tr2) by the intermediary of a diode (D1), a control votlage (Vmod1800) is at low level and the first amplification stage (422) is blocked thus reducing the power consumption. The signal transmission section (58) comprises a switching circuit connected between two internal nodes, two capacitors and a resistor. The switching circuit is controlled to be in conducting state or non-conducting state with respect to the input signal according to the mode selection signal. The switching circuit comprises a diode (D1), or a transistor connected as a diode. The power amplifier (claimed) is in 8 embodiments. In the embodiments other than the first, the power amplifier comprises an additional inductor connected between the second internal node of the signal transmssion circuit and the ground, an additional diode, or an additional matching circuit between the first and the second amplification stages. The first and the second amplification elements are transistors of type heterojunction bipolar transistor (HBT).
申请公布号 FR2840129(A1) 申请公布日期 2003.11.28
申请号 FR20030000791 申请日期 2003.01.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YAMAMOTO KAZUYA;SHIMURA TERUYUKI;ASADA TOMOYUKI;SUZUKI SATOSHI
分类号 H03F3/213;H03F3/193;H03G3/12;(IPC1-7):H03F3/19;H03F3/195;H03F3/20 主分类号 H03F3/213
代理机构 代理人
主权项
地址