| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge waveguide type nitride semiconductor light emission element which has a stable characteristic such as a threshold current, has high production efficiency and has favorable reproducibility by easily controlling an etching depth and thereby adjusting the thickness of a semiconductor layer accurately in dry-etching to a ridge shape. SOLUTION: The manufacturing method of the ridge waveguide type nitride semiconductor light emission element has an etching rate change layer between a contact layer dry-etched to a ridge shape and an active layer. In dry-etching to a ridge shape, the surface of a wafer is irradiated with light, an etching rate change layer is detected by a film thickness interference signal of reflection light and an etching depth is controlled. COPYRIGHT: (C)2004,JPO
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