METHOD FOR FORMING CONTACT PLUG WITH LOW CONTACT RESISTANCE

摘要

PURPOSE: A method for forming a contact plug is provided to be capable of reducing the contact resistance by restraining the growth of a native oxide. CONSTITUTION: After forming an interlayer dielectric(26) on a silicon substrate(20) having a transistor, a contact hole is formed by selectively etching the interlayer dielectric. A native oxide layer is removed by cleaning the contact hole. An epitaxial silicon layer(28) is partially grown on the exposed silicon substrate(20) by SEG(Selective Epitaxial Growth) using the first reactor of 10¬-6 Torr below. A polysilicon layer(30) is entirely filled into the contact hole by using the second reactor of 0.2-1.5 Torr.