METHOD FOR PRODUCING SILICON CARBIDE NANOWIRES

摘要

PURPOSE: Provided is a method for producing a silicon carbide nanowire having high purity, high density and excellent crystallinity, which is useful as a nano electric material and an electronic device material, by simple processing steps. CONSTITUTION: The method for producing a silicon carbide nanowire comprises the steps of: dissolving an iron salt into a polar solvent and coating the solution on a silicone substrate; introducing the coated silicone substrate into a reaction furnace, positioning a quartz boat in which gallium metal and gallium nitride are contained, near the substrate and heating the reaction furnace; and injecting methane gas and hydrogen gas into the reaction furnace after the temperature of the reaction furnace is reached to 1000-1200 deg.C, and then cooling it to room temperature.