THERMALLY STABLE FERROELECTRIC MEMORY

摘要

PURPOSE: A thermally stable ferroelectric memory is provided to improve an interval of data retention time by forming a bit arrangement of a ring structure wherein a domain for forming dielectric polarization penetrates a ferroelectric layer. CONSTITUTION: A lower electrode(11) is prepared. A ferroelectric layer(13) is formed on the lower electrode and a dielectric polarization domain(15) is set up as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. The thickness(d) of the ferroelectric layer and the area(A) of the bit satisfy the following formula. d is not greater than 2(square root of A/pi).