| 摘要 |
<p>A polishing method and a polishing system in which accurate and stabilized electrolytic polishing is realized by controlling the potential of a working electrode correctly, and a method for fabricating a semiconductor device utilizing the polishing method and system. The polishing method is characterized in that a substrate having a metal film formed thereon and a counter electrode are disposed oppositely in electrolyte and then the metal film is conducted based on the potential thereof with respect to a reference electrode through the electrolyte. The polishing system is characterized in that a substrate having a metal film formed thereon, a counter electrode disposed oppositely to the substrate at a specified interval, and a reference electrode becoming the reference potential of the metal film are arranged in electrolyte, and then the metal film is conducted based on the potential thereof with respect to the reference electrode through the electrolyte.</p> |
