| 摘要 |
<p>A method of forming a conductor (16) on a substrate (14) including steps of depositing tantalum (22) on a glass layer (20) of the substrate; oxidizing the tantalum; and depositing a noble metal (24) on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor (12) or other thin film ferroelectric device. The device can include a substrate comprising a glass layer (20); and an electrode (16) connected to the glass layer. The electrode comprising can include a noble metal (24) connected to the glass layer (20) by an adhesion layer (22) comprising Ta2O5.</p> |
