| 发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE INCLUDING A METAL OXIDE INTERFACE WITH SILICON |
| 摘要 |
A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20'). <IMAGE> |
| 申请公布号 |
SG99871(A1) |
申请公布日期 |
2003.11.27 |
| 申请号 |
SG20000005662 |
申请日期 |
2000.10.03 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
JAMAL RAMDANI;RAVINDRANATH DROOPAD;YU ZHIYI, JIMMY |
| 分类号 |
C30B29/16;C30B25/02;H01L21/24;H01L21/316;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/105;H01L27/108;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
C30B29/16 |
| 代理机构 |
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