SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A method for manufacturing a small, thin semiconductor device incorporated in an electronic apparatus. An oxide film is formed on main and back surfaces of a prepared silicon wafer. An insulating film is selectively formed on the main surface of the wafer, and through holes are formed. A metal multilayer film is formed on the oxide film at the bottom of each through hole. First and second metal films are formed on the metal multilayer film to form a metal pedestal. A semiconductor chip where a diode is fabricated on a main surface of one of the metal pedestals is fixed through one electrode. Another electrode is connected to another metal pedestal through a conductive wire. The semiconductor chip and the wire are covered with an insulating resin layer. The silicon wafer and the oxide film are removed while partially leaving the oxide film adhered to the back of an encapsulating body. The oxide film on the back of the resin layer is removed by etching. A metal plating film is formed on the surface of the metal pedestal exposed from the back of the resin layer. The resin layer is cut horizontally and vertically, thus fabricating a semiconductor device.