发明名称 |
Semiconductor element and semiconductor device comprising the same |
摘要 |
A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
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申请公布号 |
US2003218170(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20030387410 |
申请日期 |
2003.03.14 |
申请人 |
YAMAZAKI SHUNPEI;KATO KIYOSHI;ISOBE ATSUO;MIYAIRI HIDEKAZU;SUZAWA HIDEOMI;SHIONOIRI YUTAKA;MIYAKE HIROYUKI |
发明人 |
YAMAZAKI SHUNPEI;KATO KIYOSHI;ISOBE ATSUO;MIYAIRI HIDEKAZU;SUZAWA HIDEOMI;SHIONOIRI YUTAKA;MIYAKE HIROYUKI |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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