| 发明名称 |
Process for removing resist layers from a tungsten-containing surface used in the microelectronics industry comprises using a plasma produced from a gas mixture containing an oxygen-containing gas and a fluorine-containing gas |
| 摘要 |
Process for removing resist layers from a tungsten-containing surface comprises using a plasma produced from a gas mixture containing an oxygen-containing gas and a fluorine-containing gas.
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| 申请公布号 |
DE10220586(A1) |
申请公布日期 |
2003.11.27 |
| 申请号 |
DE20021020586 |
申请日期 |
2002.05.08 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BEWERSDORFF-SARLETTE, ULRIKE;SCHUPKE, KRISTIN;RUDER, THOMAS |
| 分类号 |
G03F7/42;H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/311;H01L21/321 |
主分类号 |
G03F7/42 |
| 代理机构 |
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代理人 |
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| 主权项 |
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