发明名称 |
IMPROVED ELECTRODE FOR THIN FILM CAPACITOR DEVICES |
摘要 |
A method of forming a conductor (16) on a substrate (14) including steps of depositing tantalum (22) on a glass layer (20) of the substrate; oxidizing the tantalum; and depositing a noble metal (24) on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor (12) or other thin film ferroelectric device. The device can include a substrate comprising a glass layer (20); and an electrode (16) connected to the glass layer. The electrode comprising can include a noble metal (24) connected to the glass layer (20) by an adhesion layer (22) comprising Ta2O5.
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申请公布号 |
WO03098646(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
WO2003US14934 |
申请日期 |
2003.05.12 |
申请人 |
RAYTHEON COMPANY |
发明人 |
DRAB, JOHN, J.;DOUGHERTY, THOMAS, K.;KEHLE, KATHLEEN, A. |
分类号 |
H01L27/105;H01G4/008;H01G4/10;H01G4/33;H01L21/02;H01L21/316;H01L21/8246;(IPC1-7):H01G4/005;H01L21/283 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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