| 摘要 |
A semiconductor memory device of this invention enables high rate readout of stored data without read failure. The semiconductor memory device has a group of memory transistors including a plurality of memory transistors connected in series and a data readout line, through which data stored in the memory transistors is outputted. A sense amplifier is connected to the data readout line. The data readout line is pre-charged to a first electric potential by a transistor for pre-charge. A first transistor for keeping voltage controlled by the sense amplifier is connected to the data readout line, and a second transistor for keeping voltage is connected between the first transistor for keeping voltage and a node at the first electric potential. Furthermore, the semiconductor memory device of this invention has a delay circuit generating a delay signal to turn on the second transistor for keeping voltage, after pre-charging by the transistor for pre-charge is completed. |
