HIGH RESISTIVITY SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF PRODUCING IT
摘要
The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.
申请公布号
WO03038868(A3)
申请公布日期
2003.11.27
申请号
WO2002SE01961
申请日期
2002.10.28
申请人
OKMETIC OYJ;ELLISON, ALEXANDRE;SON, NGUYEN, TIEN;MAGNUSSON, BJOERN;JANZEN, ERIK
发明人
ELLISON, ALEXANDRE;SON, NGUYEN, TIEN;MAGNUSSON, BJOERN;JANZEN, ERIK