| 摘要 |
There are provided a first insulating film formed over a semiconductor substrate, an adhesion layer formed on the first insulating film and made of titanium oxide having grains a width of which is larger than a height, a capacitor lower electrode formed on the adhesion layer and containing a noble metal, a capacitor dielectric film formed on the capacitor lower electrode and made of ferroelectric material, and a capacitor upper electrode formed on the capacitor dielectric film.
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