Equi-potential sensing magnetic random access memory (MRAM) with series diodes

摘要

A data storage device that includes an array of resistive memory cells and a circuit that is electrically connected to the array. The resistive memory cells include magnetic random access memory cells that are electrically connected to diodes. The circuit is capable of applying a first voltage to some of the resistive memory cells in the array, a second voltage to other cells in the array, and a third voltage to yet other cells in the array. Also, a method of sensing the resistance state of a selected resistive memory cell using the circuit.