HIGH-RELIABILITY GROUP III-NITRIDE LIGHT EMITTING DIODE

摘要

A physically robust light emitting diode is disclosed that offers high-reliability in sstandard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nutride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.