PHOTORESIST STRIP WITH 02 AND NH3 FOR ORGANOSILICATE GLASS APPLICATIONS
摘要
Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.
申请公布号
WO02065513(B1)
申请公布日期
2003.11.27
申请号
WO2002US03329
申请日期
2002.01.30
申请人
LAM RESEARCH CORPORATION;ANNAPRAGADA, RAO, V.;MOREY, IAN, J.;HO, CHOK, W.